power m o sfet 1. ga te 3.source 2.drai n ? ordering information 10n60 10N65 1 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 10n6 5 10 amps, 600/650 volts n-channel power mosfet ? description is a high voltage an d high c urrent power mosfet, desig ne d to have better characteristics, such as fast switching time, low gate ch arg e, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed s w itching applications in power supplies, pwm motor controls, high efficient dc to dc convert ers and bridge circuits. ? features * 10a, 600 v, r ds (on) =0.73 ? @v gs = 10v * lo w gate charge ( typical 44 nc) * low crss ( typical 18 pf) * fast s w itching * 100 % aval anche tested * improved dv/ d t capability 10n6 0 ? sy mbol to-263/d pak to-262/i pak 10n60 pin assig n men t ordering n um ber package 1 2 3 t o -220 g d s ito-220/to-220f g d s g d s g d s 10N65 2 2 1 to-220 1 1 1 to-262/i pak 2 to-263/d pak 2 ito-220/to-220f pa rt no. package packing -tu to-220 50pcs / tube to-262 50 pcs / tube to-263 50pcs / tube to-263 800pcs / 13" reel ito-220/to-220f 50pcs / tube 10n6* - tu 10n6* -tu 10n6* -tu 10n6* -tr 10n6* note: pin assignment: g: ga te d: drain s: source a l l d a t a s h e e t
power m o sfet 10n60 10N65 2 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 50 w ? absolute maxi mu m ratings ( t c = 25 , unless other w ise specified) paramet er symbol ratings unit drain-s ource voltag e v dss 650 v gate-source v o ltage v gss 30 v avala nche c urrent (note 2) i ar 10 a contin uo us i d 10 a drain c u rrent pulse d (note 2) i dm 38.0 a singl e puls ed (note 3) e as 700 mj ava l anche energy repetitiv e (not e 2) e ar 15.6 mj peak di ode r ecovery dv/dt (note 4) dv/dt 4.5 v/ns t o -220 156 w po w e r diss i pation p d ( t c = 25 ) junctio n t e mperature t j + 150 ambient oper a t ing t emperatur e t opr -55 ~ + 150 storage t emperature t st g -55 ~ + 150 notes: 1. absol u te ma ximum ratings are those values be yo nd w hich the device could be permanently damaged. absol u te ma xi mum ratings are stress ratings only an d functi onal devic e oper atio n is not i m plie d. 2. repetitiv e rati ng : pulse width limited by t j 3. l= 7.3mh, i as =1 0a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 9.5a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal data 10n60 10N65 600 v t o -220f to-263/d pak 2 178 w 0.85 paramet er symbol rat i ngs unit t o -220 62.5 ito-220/to-220f 62.5 junctio n -to-am bient ja /w t o -220 0.85 2.60 junctio n -to-ca se jc /w 0.85 to-262/i pak 2 to-263/d pak 2 to-262/i pak 2 to-263/d pak 2 62.5 62.5 ito-220/to-220f a l l d a t a s h e e t
power m o sfet 10n60 10N65 3 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com ? electrical characteri s tics (t j = 25 , unless oth e r w is e specified) parameter symbol tes t conditions min typ max unit off chara c teristics 10n60 v drain-source breakdow n voltage 10N65 bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage curr ent i dss v ds = 600v, v gs = 0v 1 a forward v gs = 30v, v ds = 0v 100 na gate-source leakage curren t reverse i gss v gs = -30v, v ds = 0v -100 na breakdown vo ltage temperature coefficient bv dss /t j i d = 250 a, referenc ed to 25c 0.7 v/ on chara c teristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d =4.75a 0.6 0.73 ? dynami c ch aracteristics input cap a cita nce c iss 1570 2040 pf output capacitance c oss 166 215 pf reverse transfer capacitanc e c rss v ds =25v, v gs =0v,f =1mhz 18 24 pf switching c h a r a c teris t ics turn-on delay t ime t d (on) 23 55 ns t u rn-on rise t i me t r 69 150 ns turn-off delay t ime t d(off) 144 300 ns turn-off fall t i me t f v dd =300v, i d =10a, r g =2 5 ? (note 1, 2) 77 165 ns total gate charge q g 44 57 nc gate-source charge q gs 6.7 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =10a (note 1, 2) 18.5 nc drain-sour ce diode cha racteristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i sd = 10 a 1.4 v continuous drain-so urce c urrent i sd 10 a pulse d drai n-s ource c u rrent i sm 38 a reverse recovery ti me t rr 420 ns reverse recovery charge q rr v gs = 0 v, i sd = 10a, di/dt = 100 a/ s (note1) 4.2 c notes: 1. pulse te st: pulse width 300 s, duty cy cle 2% 2. essentia ll y in d epe nde nt of op eratin g temper ature 600 10n60 10N65 a l l d a t a s h e e t
power m o sfet ? test circ uits and wavefor m s same type as d.u.t. l v dd drive r v gs r g - v ds d.u.t. + * d v/d t co ntroll ed by r g * i sd co ntr oll e d by pulse period * d.u.t.-d e vice under test p. w. period d= v gs ( d river) i sd (d .u .t.) i fm , bo dy dio de forwa r d current di/dt i rm bod y diod e reve rse current body di od e recovery dv/dt body diode forward voltage drop v dd 10 v v ds (d.u.t. ) - + v gs = p.w. period f i g. 1 a peak diode recovery dv/dt test circuit f i g. 1 b peak diode recovery dv/dt waveforms 10n60 10N65 4 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 a l l d a t a s h e e t
power m o sfet ? test circ uits and wavefor m s (cont.) fig. 2a s w itching test circuit fig. 2b s witching waveforms f ig. 3 a gate charge test circuit fig. 3b gate charge waveform d.u. t. r d 10 v v ds l v dd t p v dd t p time bv dss i as i d(t ) v ds (t) fig. 4a unc l amped inductive switching test circuit fig. 4b unc lamped inductive switching waveforms 10n60 10N65 5 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 a l l d a t a s h e e t
power m o sfet 10n60 10N65 6 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 ? ty pic al c h aracteristics drain-sour ce on-resistance, r ds(on) ( ) reverse dra i n current, i dr (a) g a te-sour ce voltag e, v cg (v) capacitance, (pf) a l l d a t a s h e e t
power m o sfet 10n60 10N65 7 of 7 z ibo seno electronic engineering co., ltd. www.senocn.com 10n60 10N65 drain- so urce breakdown voltage, bv dss (norm a lized) dra i n-so urce on-resistance, r ds(o n ) (normaliz ed) 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 drain-so urce voltage, v ds (v) drain cu rre nt, i d (a) maximum safe op erating area 10 s 100 s 1ms 10ms 100ms dc notes: 1.t c =25 2.t j =150 3.sing le pulse opera tion in this area is united by r dm 10 8 6 4 2 0 50 25 75 100 12 5 150 case t e mperature, t c ( ) maximum drain current vs. case temperature drain curren t, i d (a) p dw t 1 t 2 sing le pulse d=0.5 0.2 0.1 0.05 0.02 0.01 notes: 1.z jc(t )= 2.5d/w max 2.du ty fa ctor,d=t1/t2 3.t jw -t c =p dw -z jc (t) square wa ve pul se duration, t 1 (sec ) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 tra n sient thermal response curve a l l d a t a s h e e t
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